?2004 fairchild semiconductor corporation october 2004 isl9v3036d3s / isl9v3036s3s / isl9v3036p3 rev. c3, october 2004 isl9v3036d3s / isl9v3036s3s / isl9v3036p3 isl9v3036d3s / isl9v3036s3s / isl9v3036p3 ecospark tm 300mj , 360v, n-channel ignition igbt general description the isl9v3036d3s, isl9v3036s3s, and isl9v3036p3 are the next generation igbts that offer outstanding scis capability in the space saving d-pak (to-252), as well as the industry standard d2- pak (to-263) and to-220 plastic packages. these devices are intended for use in automotive ignition circuits, specifically as a coil drivers. internal diodes provide voltage clamping without the need for external components. ecospark? devices can be custom made to specific clamp voltages. contact your nearest fairchild sales office for more information. formerly developmental type 49442 applications automotive ignition coil driver circuits coil- on plug applications features industry standard d 2 -pak package scis energy = 300mj at t j = 25 o c logic level gate drive device maximum ratings t j = 25c unless otherwise noted symbol parameter ratings units bv cer collector to emitter breakdown voltage (i c = 1 ma) 360 v bv ecs emitter to collector voltage - reverse battery condition (i c = 10 ma) 24 v e scis25 t j = 25c, i scis = 14.2a, l = 3.0 mhy 300 mj e scis150 t j = 150c, i scis = 10.6a, l = 3.0 mhy 170 mj i c25 collector current continuous, at t c = 25c, see fig 9 21 a i c110 collector current continuous, at t c = 110c, see fig 9 17 a v gem gate to emitter voltage continuous 10 v p d power dissipation total t c = 25c 150 w power dissipation derating t c > 25c 1.0 w/c t j operating junction temperature range -40 to 175 c t stg storage junction temperature range -40 to 175 c t l max lead temp for soldering (leads at 1.6mm from case for 10s) 300 c t pkg max lead temp for soldering (package body for 10s) 260 c esd electrostatic discharge voltage at 100pf, 1500 ? 4kv package gate collector emitter r 2 r 1 symbol jedec to-252aa collector (flange) d-pak d2-pak jedec to-263ab collector (flange) jedec to-220ab e g e g e g c
?2004 fairchild semiconductor corporation isl9v3036d3s / isl9v3036s3s / isl9v3036p3 rev. c3, october 2004 isl9v3036d3s / isl9v3036s3s / isl9v3036p3 package marking and ordering information electrical characteristics t j = 25 c unless otherwise noted off state characteristics on state characteristics dynamic characteristics switching characteristics thermal characteristics device marking device package reel size tape width quantity v3036d ISL9V3036D3ST to-252aa 330mm 16mm 2500 v3036s isl9v3036s3st to-263ab 330mm 24mm 800 v3036p isl9v3036p3 to-220aa tube n/a 50 v3036d isl9v3036d3s to-252aa tube n/a 75 v3036s isl9v3036s3s to-263ab tube n/a 50 symbol parameter test conditions min typ max units bv cer collector to emitter breakdown voltage i c = 2ma, v ge = 0, r g = 1k ?, see fig. 15 t j = -40 to 150 c 330 360 390 v bv ces collector to emitter breakdown voltage i c = 10ma, v ge = 0, r g = 0 , see fig. 15 t j = -40 to 150 c 350 380 410 v bv ecs emitter to collector breakdown voltage i c = -75ma, v ge = 0v, t c = 25 c 30 - - v bv ges gate to emitter breakdown voltage i ges = 2ma 12 14 - v i cer collector to emitter leakage current v cer = 250v, r g = 1k ?, see fig. 11 t c = 25 c- - 25 a t c = 150 c- - 1 ma i ecs emitter to collector leakage current v ec = 24v, see fig. 11 t c = 25 c- - 1 ma t c = 150 c- - 40 ma r 1 series gate resistance - 70 - ? r 2 gate to emitter resistance 10k - 26k ? v ce(sat) collector to emitter saturation voltage i c = 6a, v ge = 4v t c = 25 c, see fig. 3 - 1.25 1.60 v v ce(sat) collector to emitter saturation voltage i c = 10a, v ge = 4.5v t c = 150 c, see fig. 4 - 1.58 1.80 v v ce(sat) collector to emitter saturation voltage i c = 15a, v ge = 4.5v t c = 150 c - 1.90 2.20 v q g(on) gate charge i c = 10a, v ce = 12v, v ge = 5v, see fig. 14 -17-nc v ge(th) gate to emitter threshold voltage i c = 1.0ma, v ce = v ge, see fig. 10 t c = 25 c1.3 - 2.2 v t c = 150 c0.75 - 1.8 v v gep gate to emitter plateau voltage i c = 10a, v ce = 12v - 3.0 - v t d(on)r current turn-on delay time-resistive v ce = 14v, r l = 1 ?, v ge = 5v, r g = 1k ? t j = 25 c, see fig. 12 -0.74s t rr current rise time-resistive - 2.1 7 s t d(off)l current turn-off delay time-inductive v ce = 300v, r l = 500h , v ge = 5v, r g = 1k ? t j = 25 c, see fig. 12 - 4.8 15 s t fl current fall time-inductive - 2.8 15 s scis self clamped inductive switching t j = 25 c, l = 3.0 mh, r g = 1k ?, v ge = 5v - - 300 mj r jc thermal resistance junction-case to-252, to-263, to-220 - - 1.0 c/w
?2004 fairchild semiconductor corporation isl9v3036d3s / isl9v3036s3s / isl9v3036p3 rev. c3, october 2004 isl9v3036d3s / isl9v3036s3s / isl9v3036p3 typical performance curves figure 1. self clamped inductive switching current vs time in clamp figure 2. self clamped inductive switching current vs inductance figure 3. collector to emitter on-state voltage vs junction temperature figure 4. collector to emitter on-state voltage vs junction temperature figure 5. collector to emitter on-state voltage vs collector current figure 6. collector to emitter on-state voltage vs collector current t clp , time in clamp (s) i scis , inductive switching current (a) 25 15 5 30 20 10 0 r g = 1k ? , v ge = 5v, v dd = 14v 200 175 150 0125 50 25 75 100 t j = 25 c t j = 150 c scis curves valid for v clamp voltages of <390v 25 15 5 30 20 10 0 i scis , inductive switching current (a) 010 2468 t j = 25 c t j = 150 c l, inductance (mhy) r g = 1k ? , v ge = 5v, v dd = 14v scis curves valid for v clamp voltages of <390v 1.30 1.26 1.22 1.18 1.14 -75 25 -25 175 125 75 -50 0 50 100 150 t j , junction temperature ( c) v ce , collector to emitter voltage (v) v ge = 4.0v v ge = 3.7v v ge = 4.5v v ge = 5.0v v ge = 8.0v i ce = 6a -75 25 -25 175 125 75 -50 0 50 100 150 1.8 1.7 1.6 1.5 1.4 t j , junction temperature ( c) v ce , collector to emitter voltage (v) i ce = 10a 1.3 1.2 v ge = 4.0v v ge = 3.7v v ge = 4.5v v ge = 5.0v v ge = 8.0v i ce , collector to emitter current (a) v ce , collector to emitter voltage (v) 20 0 10 02.0 1.0 3.0 4.0 25 15 5 t j = - 40 c v ge = 4.0v v ge = 3.7v v ge = 4.5v v ge = 5.0v v ge = 8.0v v ge = 4.0v v ge = 3.7v v ge = 4.5v v ge = 5.0v v ge = 8.0v t j = 25 c i ce , collector to emitter current (a) v ce , collector to emitter voltage (v) 20 10 0 25 15 5 02.0 1.0 3.0 4.0
?2004 fairchild semiconductor corporation isl9v3036d3s / isl9v3036s3s / isl9v3036p3 rev. c3, october 2004 isl9v3036d3s / isl9v3036s3s / isl9v3036p3 typical performance curves (continued) figure 7. collector to emitter on-state voltage vs collector current figure 8. transfer characteristics figure 9. dc collector current vs case temperature figure 10. threshold voltage vs junction temperature figure 11. leakage current vs junction temperature figure 12. switching time vs junction temperature i ce , collector to emitter current (a) v ce , collector to emitter voltage (v) 25 15 5 0 20 10 02.0 1.0 3.0 4.0 v ge = 4.0v v ge = 3.7v v ge = 4.5v v ge = 5.0v v ge = 8.0v t j = 175 c i ce , collector to emitter current (a) v ge , gate to emitter voltage (v) 2.0 1.0 3.0 4.0 25 15 5 0 20 10 pulse duration = 250s duty cycle < 0.5%, v ce = 5v t j = 25 c t j = 150 c 2.5 1.5 3.5 4.5 t j = -40 c i ce , dc collector current (a) t c , case temperature ( c) 25 25 175 125 75 50 100 150 20 15 10 5 0 v ge = 4.0v 2.2 175 50 100 2.0 1.8 1.6 1.4 1.0 v ce = v ge v th , threshold voltage (v) t j junction temperature ( c) 150 0 -50 125 75 25 -25 1.2 i ce = 1ma leakage current (a) t j , junction temperature ( c) 1000 10 0.1 10000 100 1 25 -25 175 125 75 -50 0 50 100 150 v ces = 250v v ecs = 24v v ces = 300v 25 175 125 75 50 100 150 t j , junction temperature ( c) switching time (s) 12 10 8 6 4 2 i ce = 6.5a, v ge = 5v, r g = 1k ? resistive t off inductive t off resistive t on
?2004 fairchild semiconductor corporation isl9v3036d3s / isl9v3036s3s / isl9v3036p3 rev. c3, october 2004 isl9v3036d3s / isl9v3036s3s / isl9v3036p3 typical performance curves (continued) figure 13. capacitance vs collector to emitter voltage figure 14. gate charge figure 15. breakdown voltage vs series gate resistance figure 16. igbt normalized transient thermal impedance, junction to case c, capacitance (pf) v ce , collector to emitter voltage (v) 1600 800 400 1200 010 5152025 0 c ies c oes c res frequency = 1 mhz q g , gate charge (nc) v ge , gate to emitter voltage (v) 0 2 4 8 0 4 8 1216202428 3 5 7 6 1 32 i g(ref) = 1ma, r l = 1.25 ?, t j = 25 c v ce = 6v v ce = 12v bv cer , breakdown voltage (v) r g , series gate resistance ( ? ) 375 355 345 365 10 1k 10k 335 100 360 350 370 340 t j = - 40 c t j = 25 c t j = 175 c i cer = 10ma z thjc , normalized thermal response t 1 , rectangular pulse duration (s) 10 0 10 -2 10 -1 10 -1 10 -2 10 -3 10 -4 10 0 duty factor, d = t 1 / t 2 peak t j = (p d x z jc x r jc ) + t c t 1 t 2 p d 10 -5 0.5 0.2 0.1 0.05 0.02 0.01 single pulse
?2004 fairchild semiconductor corporation isl9v3036d3s / isl9v3036s3s / isl9v3036p3 rev. c3, october 2004 isl9v3036d3s / isl9v3036s3s / isl9v3036p3 test circuit and waveforms figure 17. inductive switching test circuit figure 18. t on and t off switching test circuit figure 19. unclamped energy test circuit figure 20. unclamped energy waveforms r g g c e v ce l pulse gen dut r g = 1k ? + - v ce dut 5v c g e load r or l t p v ge 0.01 ? l i as + - v ce v dd r g dut vary t p to obtain required peak i as 0v v dd v ce bv ces t p i as t av 0
?2004 fairchild semiconductor corporation isl9v3036d3s / isl9v3036s3s / isl9v3036p3 rev. c3, october 2004 isl9v3036d3s / isl9v3036s3s / isl9v3036p3 spice thermal model rev 24 april 2002 isl9v3036d3s/ isl9v3036s3s / isl9v3036p3 ctherm1 th 6 2.1e -3 ctherm2 6 5 1.4e -1 ctherm3 5 4 7.3e -3 ctherm4 4 3 2.1e -1 ctherm5 3 2 1.1e -1 ctherm6 2 tl 6.2e +6 rtherm1 th 6 1.2e -1 rtherm2 6 5 1.9e -1 rtherm3 5 4 2.2e -1 rtherm4 4 3 6.0e -2 rtherm5 3 2 5.8e -2 rtherm6 2 tl 1.6e -3 saber thermal model saber thermal model isl9v3036d3s / isl9v3036s3s / isl9v3036p3 template thermal_model th tl thermal_c th, tl { ctherm.ctherm1 th 6 = 2.1e -3 ctherm.ctherm2 6 5 = 1.4e -1 ctherm.ctherm3 5 4 = 7.3e -3 ctherm.ctherm4 4 3 = 2.2e -1 ctherm.ctherm5 3 2 =1.1e -1 ctherm.ctherm6 2 tl = 6.2e +6 rtherm.rtherm1 th 6 = 1.2e -1 rtherm.rtherm2 6 5 = 1.9e -1 rtherm.rtherm3 5 4 = 2.2e -1 rtherm.rtherm4 4 3 = 6.0e -2 rtherm.rtherm5 3 2 = 5.8e -2 rtherm.rtherm6 2 tl = 1.6e -3 } rtherm4 rtherm6 rtherm5 rtherm3 rtherm2 rtherm1 ctherm4 ctherm6 ctherm5 ctherm3 ctherm2 ctherm1 tl 2 3 4 5 6 th junction case
disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? pacman? pop? fast ? fastr? fps? frfet? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect? rev. i13 acex? activearray? bottomless? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? serdes? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic ? tinyopto? trutranslation? uhc? ultrafet ? vcx? across the board. around the world.? the power franchise ? programmable active droop?
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